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Single Electron Spin Measurements in Submicron Si MOS-FETs Random Telegraph Signal, Single Electron Spin Resonance by Ming Xiao

by Ming Xiao

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Single Electron Spin Measurements in Submicron Si MOS-FETs Random Telegraph Signal, Single Electron Spin Resonance by Ming Xiao
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Single Electron Spin Measurements in Submicron Si MOS-FETs Random Telegraph Signal, Single Electron Spin Resonance

by Ming Xiao

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VDM Verlag Dr. Müller. Paperback. New. Paperback. 124 pages. Dimensions: 8.7in. x 5.9in. x 0.3in.Presented is our measurements of a single electronic spin in the gate oxide of submicron-size silicon field effect transistors. Defects near the silicon and silicon dioxide interface have profound effects on the transistor conduction properties. For a submicron transistor, there might be only one isolated trap state that is within a proper tunneling distance regarding to both the coordinate and energy. We have studied the statistics and dynamics of individual defects extensively by random telegraph signal (RTS), the stochastic switching of the channel conductivity due to the trapping of single channel electrons by the defect. We also have, for the first time, studied the spin properties of these individual defects. By investigating the dependence of RTS statistics on a plane magnetic field, we have identified spin states of a single electron on a defect. Using microwave radiation of frequencies ranging from 16 - 50 GHz, we have detected magnetic resonance of a single electron spin. The trap occupancy or channel current changes at the electron spin resonance condition, with a g-factor of 2. 02-0. 015. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN.
  • Bookseller BuySomeBooks US (US)
  • Format/Binding Paperback
  • Book Condition New New
  • Quantity Available 20
  • ISBN 10 3836493756
  • ISBN 13 9783836493758
  • Publisher VDM Verlag Dr. Müller
  • Keywords Ming Xiao,Physics

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Single Electron Spin Measurements in Submicron Si MOS-FETs  Random Telegraph Signal, Single...
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Single Electron Spin Measurements in Submicron Si MOS-FETs Random Telegraph Signal, Single Electron Spin Resonance

by Ming Xiao

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Single Electron Spin Measurements in Submicron Si Mos-Fets Random Telegraph Signal, Single...
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Single Electron Spin Measurements in Submicron Si Mos-Fets Random Telegraph Signal, Single Electron Spin Resonance

by Ming Xiao

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ISBN 13
9783836493758
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3836493756
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Single Electron Spin Measurements in Submicron Si MOS-FETs: Random Telegraph Signal, Single...
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Single Electron Spin Measurements in Submicron Si MOS-FETs: Random Telegraph Signal, Single Electron Spin Resonance

by Ming Xiao

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Paperback
ISBN 13
9783836493758
ISBN 10
3836493756
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VDM Verlag Dr. Müller, 2008-12-18. Paperback. Used:Good.
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