Skip to content

High Dielectric Constant Materials: VLSI Mosfet Applications
Stock Photo: Cover May Be Different

High Dielectric Constant Materials: VLSI Mosfet Applications Hardcover - 2004 - 2005th Edition

by Howard Huff (Editor); David Gilmer (Editor)


From the publisher

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.

First line

High-k dielectrics are a technology landmark so fundamental as to raise important questions about the future economics of the industry.

From the rear cover

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Details

  • Title High Dielectric Constant Materials: VLSI Mosfet Applications
  • Author Howard Huff (Editor); David Gilmer (Editor)
  • Binding Hardcover
  • Edition number 2005th
  • Edition 2005
  • Pages 710
  • Volumes 1
  • Language ENG
  • Publisher Springer, Berlin, Germany
  • Date 2004-09-30
  • ISBN 9783540210818 / 3540210814
  • Weight 2.64 lbs (1.20 kg)
  • Dimensions 9.32 x 6.43 x 1.79 in (23.67 x 16.33 x 4.55 cm)
  • Dewey Decimal Code 621.395
Back to Top

More Copies for Sale

High Dielectric Constant Materials : VLSI MOSFET Applications
Stock Photo: Cover May Be Different

High Dielectric Constant Materials : VLSI MOSFET Applications

by Howard Huff

  • New
  • Hardcover
Condition
New
Binding
Hardcover
ISBN 10 / ISBN 13
9783540210818 / 3540210814
Quantity Available
817
Seller
Uxbridge, Greater London, United Kingdom
Seller rating:
This seller has earned a 5 of 5 Stars rating from Biblio customers.
Item Price
$349.09
$10.15 shipping to USA

Show Details

Description:
Hard Cover. New. New Book; Fast Shipping from UK; Not signed; Not First Edition; The High Dielectric Constant Materials : VLSI MOSFET Applications.
Item Price
$349.09
$10.15 shipping to USA
High Dielectric Constant Materials: VLSI MOSFET Applications (Springer Series in Advanced...
Stock Photo: Cover May Be Different

High Dielectric Constant Materials: VLSI MOSFET Applications (Springer Series in Advanced Microelectronics, 16)

by Huff, Howard [Editor]; Gilmer, David [Editor];

  • New
  • Hardcover
Condition
New
Binding
Hardcover
ISBN 10 / ISBN 13
9783540210818 / 3540210814
Quantity Available
5
Seller
campbelltown, Florida, United States
Seller rating:
This seller has earned a 1 of 5 Stars rating from Biblio customers.
Item Price
$522.00
$15.00 shipping to USA

Show Details

Description:
Springer. hardcover. New. 6x1x9. Brand New Book in Publishers original Sealing
Item Price
$522.00
$15.00 shipping to USA