Fundamental Aspects of Silicon Oxidation Hardcover - 2001 - 2001st Edition
by Yves J. Chabal (Editor)
From the rear cover
This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the silicon crystal for H-passivated, clean and oxidized silicon surfaces, including oxygen diffusion and defect formation. Experimental methods include scanning tunneling microscopy, x-ray photoelectron and infrared absorption spectroscopies, ion scattering and transmission electron microscopy. Most of the theoretical contributions are based on first-principles calculations, ranging from cluster calculations to supercell and slab calculations. Phenomenological modeling of oxidation is also discussed. The material presented here will enable the reader to gain a deeper understanding of silicon oxidation and ultra-thin oxide formation (and the processes that affect the morphology of silicon oxides).
Details
- Title Fundamental Aspects of Silicon Oxidation
- Author Yves J. Chabal (Editor)
- Binding Hardcover
- Edition number 2001st
- Edition 2001
- Pages 262
- Volumes 1
- Language ENG
- Publisher Springer, Berlin Heidelberg New York
- Date 2001-04-24
- Illustrated Yes
- ISBN 9783540416821 / 354041682X
- Weight 1.25 lbs (0.57 kg)
- Dimensions 9.21 x 6.14 x 0.69 in (23.39 x 15.60 x 1.75 cm)
- Library of Congress Catalog Number 2001020054
- Dewey Decimal Code 620.11
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by Yves J. Chabal (Editor)
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