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Cambridge University Press. Used - Like New. 2008. Small publisher's mark on bottom of text block. Otherwise, Fine.
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Doping Engineering for Front-End Processing: Volume 1070 Hardcover - 2008
by B. J. Pawlak (Editor); M. L. Pelaz (Editor); M. Law (Editor)
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- Title Doping Engineering for Front-End Processing: Volume 1070
- Author B. J. Pawlak (Editor); M. L. Pelaz (Editor); M. Law (Editor)
- Binding Hardcover
- Pages 319
- Volumes 1
- Language ENG
- Publisher Cambridge University Press
- Date 2008-10-17
- ISBN 9781605110400 / 160511040X
- Weight 1.25 lbs (0.57 kg)
- Dimensions 9.2 x 6.3 x 0.9 in (23.37 x 16.00 x 2.29 cm)
- Library of Congress subjects Semiconductors - Materials, Semiconductor doping
- Library of Congress Catalog Number 2012360735
- Dewey Decimal Code 621.381
Media reviews
Citations
- Scitech Book News, 12/01/2008, Page 50
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Doping Engineering for Front-End Processing: Volume 1070 (MRS Proceedings)
by Pawlak, B.J. (ed)
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Doping Engineering for Front-End Processing: Volume 1070 (MRS Proceedings)
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Doping Engineering for Front-End Processing: Volume 1070 (MRS Proceedings)
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Doping Engineering for Front-End Processing: Volume 1070 (MRS Proceedings)
by Editor-B. J. Pawlak; Editor-M. L. Pelaz; Editor-M. Law; Editor-K. Surugo
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Doping Engineering for Front-End Processing: Volume 1070
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Hardback. New. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
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Doping Engineering for Front-End Processing
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Doping Engineering for Front-end Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.s.a: Vol 1070
by Pawlak, B. j. (Editor)/ Pelaz, M. l. (Editor)/ Law, M. (Editor)/ Suguro, K. (Editor)
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Materials Research Society, 2008. Hardcover. New. 319 pages. 9.00x6.00x0.75 inches.
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Doping Engineering for Front-End Processing: Volume 1070
by B. J. Pawlak
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Hardback. New. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
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